SIHFR9120 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 100V 5.6A DPAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | FET Type | Rds On (Max) @ Id, Vgs | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V | 2.5 W 42 W | 100 V | 4 V | 18 nC | TO-252AA | -55 °C | 150 °C | Surface Mount | 390 pF | 5.6 A | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | 600 mOhm | 20 V |