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STGP10NB60S
Discrete Semiconductor Products

STGP10NB60S

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STMicroelectronics

TRANS IGBT CHIP N-CH 600V 29A 3-PIN(3+TAB) TO-220 TUBE

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STGP10NB60S
Discrete Semiconductor Products

STGP10NB60S

Active
STMicroelectronics

TRANS IGBT CHIP N-CH 600V 29A 3-PIN(3+TAB) TO-220 TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGP10NB60S
Current - Collector (Ic) (Max) [Max]29 A
Current - Collector Pulsed (Icm)80 A
Gate Charge33 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power - Max [Max]80 W
Supplier Device PackageTO-220
Switching Energy5 mJ, 600 µJ
Td (on/off) @ 25°C1.2 µs, 700 ns
Test Condition1 kOhm, 480 V, 15 V, 10 A
Vce(on) (Max) @ Vge, Ic [Max]1.75 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1834$ 2.93

Description

General part information

STGP10NB60S Series

This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).