
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | SIHD3N50DT1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 175 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252AA |
| Power Dissipation (Max) | 69 W |
| Rds On (Max) | 3.2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.35 | 1m+ |
| Tape & Reel (TR) | 2000 | $ 0.34 | 1m+ | |
| 6000 | $ 0.32 | |||
| 10000 | $ 0.30 | |||
CAD
3D models and CAD resources for this part
Description
General part information
SIHD3 Series
N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
Documents
Technical documentation and resources