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TO-252
Discrete Semiconductor Products

SIHD3N50D-E3

LTB
Vishay Dale

POWER MOSFET, N CHANNEL, 500 V, 3 A, 2.6 OHM, TO-252 (DPAK), SURFACE MOUNT

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TO-252
Discrete Semiconductor Products

SIHD3N50D-E3

LTB
Vishay Dale

POWER MOSFET, N CHANNEL, 500 V, 3 A, 2.6 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSIHD3N50D-E3
Current - Continuous Drain (Id) (Tc)3 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)12 nC
Input Capacitance (Ciss) (Max)175 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252AA
Power Dissipation (Max)69 W
Rds On (Max)3.2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.341m+
Tube 3000$ 0.341m+

CAD

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Description

General part information

SIHD3 Series

N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA