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SOT23
Discrete Semiconductor Products

PMV50XPAR

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Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

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SOT23
Discrete Semiconductor Products

PMV50XPAR

Active
Nexperia USA Inc.

20 V, P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV50XPAR
Current - Continuous Drain (Id) @ 25°C3.6 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]744 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)4.63 W, 490 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs60 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 18$ 0.69

Description

General part information

PMV50XPA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.