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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Qualification | Vgs (Max) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Rds On (Max) @ Id, Vgs | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q101 | 10 V | Surface Mount | 150 °C | -55 °C | 20 V | TO-236AB | 4.63 W 490 mW | 1.8 V | 4.5 V | 3.6 A | 12 nC | 1 V | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 744 pF | P-Channel | 60 mOhm | Automotive |