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STD5N95K5
Discrete Semiconductor Products

STD5N95K5

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STMicroelectronics

N-CHANNEL 950 V, 2 OHM TYP., 3.5 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

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STD5N95K5
Discrete Semiconductor Products

STD5N95K5

Active
STMicroelectronics

N-CHANNEL 950 V, 2 OHM TYP., 3.5 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD5N95K5
Current - Continuous Drain (Id) @ 25°C3.5 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12.5 nC
Input Capacitance (Ciss) (Max) @ Vds220 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]70 W
Rds On (Max) @ Id, Vgs2.5 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.41
NewarkEach (Supplied on Cut Tape) 1$ 2.37
10$ 1.73
25$ 1.62
50$ 1.52
100$ 1.41
250$ 1.32
500$ 1.23
1000$ 1.16

Description

General part information

STD5N95K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.