STD3NK50Z-1
ObsoleteN-CHANNEL 500 V, 2.8 OHM TYP., 2.3 A SUPERMESH POWER MOSFET IN AN IPAK PACKAGE
STD3NK50Z-1
ObsoleteN-CHANNEL 500 V, 2.8 OHM TYP., 2.3 A SUPERMESH POWER MOSFET IN AN IPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD3NK50Z-1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.3 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 280 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 3.3 Ohm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4312 | $ 1.16 | |
| Tube | 1 | $ 0.75 | ||
| 75 | $ 0.62 | |||
| 150 | $ 0.45 | |||
| 525 | $ 0.37 | |||
| 1050 | $ 0.32 | |||
| 2025 | $ 0.28 | |||
Description
General part information
STD3N Series
The SuperMESH series is obtained through an extreme opyimization of ST’s well established strip based PowerMESH layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs icluding revolutionary MDmesh productsTYPICAL RDS(on) = 2.8OEXTREMELY HIGH dv/dt CAPABILITYESD IMPROVED CAPABILITY)100% AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZED
Documents
Technical documentation and resources
