Specification	GT30N135SRA,S1E

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	270 nC
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power - Max [Max]	348 W
Supplier Device Package	TO-247
Switching Energy	-
Switching Energy	1.3 mJ
Test Condition	60 A, 39 Ohm, 15 V, 300 V
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1350 V

GT30N135SRA Series

IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge	Supplier Device Package	Test Condition	Package / Case	Operating Temperature	Switching Energy	Switching Energy	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic
Toshiba Semiconductor and Storage GT30N135SRA,S1E	1350 V	270 nC	TO-247	15 V 39 Ohm 60 A 300 V	TO-247-3	175 °C	-	1.3 mJ	120 A	60 A	348 W	Through Hole	2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	19	$ 4.27

General part information

IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247

Technical documentation and resources