GT30N135SRA Series
IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
Manufacturer: Toshiba Semiconductor and Storage
Catalog
IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
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IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
IGBTs, 1350 V/30 A IGBT, Built-in Diodes, TO-247
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Gate Charge | Supplier Device Package | Test Condition | Package / Case | Operating Temperature | Switching Energy | Switching Energy | Current - Collector Pulsed (Icm) | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Mounting Type | Vce(on) (Max) @ Vge, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1350 V | 270 nC | TO-247 | 15 V 39 Ohm 60 A 300 V | TO-247-3 | 175 °C | - | 1.3 mJ | 120 A | 60 A | 348 W | Through Hole | 2.6 V |