Specification	UPA1874BGR-9JG-E1-A

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	930 pF
Mounting Type	Surface Mount
Package / Case	0.173 in
Package / Case	8-TSSOP
Package / Case	4.4 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

UPA1874BGR Series

N-Channel Mos Field Effect Transistor For Switching

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Configuration	Vgs(th) (Max) @ Id	Package / Case	Package / Case	Package / Case	FET Feature	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation UPA1874BGR-9JG-E1-A	14 mOhm	10 nC	Surface Mount	30 V	2 N-Channel (Dual)	1.5 V	0.173 in	8-TSSOP	4.4 mm	Logic Level Gate	8 A	2 W	8-TSSOP	MOSFET (Metal Oxide)	930 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3000	$ 1.17

General part information

The UPA1874BGR is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources