N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Configuration | Vgs(th) (Max) @ Id | Package / Case | Package / Case | Package / Case | FET Feature | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 14 mOhm | 10 nC | Surface Mount | 30 V | 2 N-Channel (Dual) | 1.5 V | 0.173 in | 8-TSSOP | 4.4 mm | Logic Level Gate | 8 A | 2 W | 8-TSSOP | MOSFET (Metal Oxide) | 930 pF |