Discrete Semiconductor Products
NTMT190N65S3H
NRNDON Semiconductor
POWER MOSFET, N-CHANNEL, SUPERFET® III, FAST, 650 V, 16 A, 190 MΩ, POWER88
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Discrete Semiconductor Products
NTMT190N65S3H
NRNDON Semiconductor
POWER MOSFET, N-CHANNEL, SUPERFET® III, FAST, 650 V, 16 A, 190 MΩ, POWER88
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMT190N65S3H |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-PowerTSFN |
| Power Dissipation (Max) | 129 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | 4-TDFN (8x8) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 6.02 | |
| 10 | $ 4.04 | |||
| 100 | $ 2.92 | |||
| 500 | $ 2.44 | |||
| 1000 | $ 2.43 | |||
| Digi-Reel® | 1 | $ 6.02 | ||
| 10 | $ 4.04 | |||
| 100 | $ 2.92 | |||
| 500 | $ 2.44 | |||
| 1000 | $ 2.43 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 5.46 | |
| 10 | $ 4.26 | |||
| 25 | $ 3.94 | |||
| 50 | $ 3.52 | |||
| 100 | $ 3.08 | |||
| 250 | $ 2.91 | |||
| 500 | $ 2.74 | |||
| 1000 | $ 2.59 | |||
| ON Semiconductor | N/A | 1 | $ 2.23 | |
Description
General part information
NTMT190N65S3H Series
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 16 A, 190 mΩ, Power88
Documents
Technical documentation and resources