NTMT190N65S3H Series

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 16 A, 190 mΩ, Power88

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 16 A, 190 mΩ, Power88

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
ON Semiconductor NTMT190N65S3H	-55 °C	150 °C	31 nC	30 V	129 W	4 V	650 V	4-PowerTSFN	MOSFET (Metal Oxide)	1600 pF	Surface Mount	190 mOhm	10 V	N-Channel	16 A	4-TDFN (8x8)

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 16 A, 190 mΩ, Power88

• 700 V @ TJ = 150°C

• Fast switching performance with robust body diode

• Ultra Low Gate Charge (Typ. Qg = 31 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 292 pF)

• Leadless Ultra-thin SMD package

• Kelvin Source Configuration

• Moisture Sensitivity Level 1 guarantee

• Typ. RDS(on) = 156 m Ω

• 100% Avalanche Tested

• RoHS Compliant

• Internal Gate Resistance: 1.1 Ω