Discrete Semiconductor Products
PBHV9115Z-QX
ActiveNexperia USA Inc.
150 V, 1 A PNP HIGH-VOLTAGE LOW VCESAT TRANSISTOR
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Search across all available documentation for this part.
Discrete Semiconductor Products
PBHV9115Z-QX
ActiveNexperia USA Inc.
150 V, 1 A PNP HIGH-VOLTAGE LOW VCESAT TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBHV9115Z-QX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 115 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 700 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | SOT-223 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 150 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 990 | $ 1.09 | |
Description
General part information
PBHV9115Z-Q Series
PNP high-voltage low VCEsatBreakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources