Catalog
150 V, 1 A PNP high-voltage low VCEsat transistor
Description
AI
PNP high-voltage low VCEsatBreakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
150 V, 1 A PNP high-voltage low VCEsat transistor
150 V, 1 A PNP high-voltage low VCEsat transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Grade | Package / Case | Power - Max [Max] | Frequency - Transition | Supplier Device Package | Transistor Type | Operating Temperature | Qualification | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 100 | 1 A | Surface Mount | 100 nA | Automotive | TO-261-4 TO-261AA | 700 mW | 115 MHz | SOT-223 | PNP | 150 °C | AEC-Q101 | 150 V | 300 mV |