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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

TIP125

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, -60 V, 65 W, 5 A, 1000 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+3
ONSEMI ISL9V3040P3
Discrete Semiconductor Products

TIP125

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, -60 V, 65 W, 5 A, 1000 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+3

Technical Specifications

Parameters and characteristics for this part

SpecificationTIP125
Current - Collector (Ic) (Max) [Max]5 A
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power - Max [Max]2 W
Supplier Device PackageTO-220
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic4 V
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
0$ 0.00
3803$ 1.04
NewarkEach 1$ 0.89
1$ 0.62
10$ 0.72
10$ 0.57
50$ 0.54
100$ 0.47
100$ 0.50
500$ 0.45
500$ 0.43
1000$ 0.38
1000$ 0.38
2500$ 0.36
5000$ 0.34
10000$ 0.33
10000$ 0.33

Description

General part information

TIP125 Series

The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.