Discrete Semiconductor Products

SQ4401EY-T1_GE3

Obsolete

MOSFET P-CH 40V 17.3A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 40V 17.3A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4401EY-T1_GE3

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC
Input Capacitance (Ciss) (Max) @ Vds	4250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	7.14 W
Rds On (Max) @ Id, Vgs [Max]	14 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Qualification	Grade
Vishay General Semiconductor - Diodes Division SQ4401EY-T1_GE3	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	20 V	-55 °C	175 ░C	8-SOIC	MOSFET (Metal Oxide)	40 V	P-Channel	4250 pF	2.5 V	115 nC	7.14 W	Surface Mount	14 mOhm
Vishay General Semiconductor - Diodes Division SQ4401EY-T1_BE3	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	20 V	-55 °C	175 ░C	8-SOIC	MOSFET (Metal Oxide)	40 V	P-Channel	4250 pF	2.5 V	115 nC	7.14 W	Surface Mount	14 mOhm	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 17.3A (Tc) 7.14W (Tc) Surface Mount 8-SOIC

Technical documentation and resources