
Discrete Semiconductor Products
SQ4401EY-T1_BE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 40V 17.3A 8SOIC
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Discrete Semiconductor Products
SQ4401EY-T1_BE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 40V 17.3A 8SOIC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SQ4401EY-T1_BE3 |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 4250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 7.14 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 14 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SQ4401 Series
P-Channel 40 V 17.3A (Tc) 7.14W (Tc) Surface Mount 8-SOIC
Documents
Technical documentation and resources
No documents available