Discrete Semiconductor Products

SQ4401EY-T1_BE3

Obsolete

MOSFET P-CH 40V 17.3A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 40V 17.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4401EY-T1_BE3

Current - Continuous Drain (Id) (Tc)	17.3 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	115 nC, 115 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4250 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	7.14 W
Qualification	AEC-Q101
Rds On (Max)	14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Input Capacitance (Ciss) (Max)	Package Length	Package Name	Package Width	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max)	FET Type	Gate Charge (Max)	Rds On (Max)	Qualification	Power Dissipation (Max)	Grade	Vgs (Max)	Technology
Vishay Dale SQ4401EY-T1_GE3	4250 pF	0.154 in	8-SOIC	3.9 mm	17.3 A	-55 °C	175 °C	10 V	4.5 V	40 V	Surface Mount	2.5 V	P-Channel	115 nC 115 nC	14 mOhm	AEC-Q101	7.14 W	Automotive	20 V	MOSFET (Metal Oxide)
Vishay Dale SQ4401EY-T1_BE3	4250 pF	0.154 in	8-SOIC	3.9 mm	17.3 A	-55 °C	175 °C	10 V	4.5 V	40 V	Surface Mount	2.5 V	P-Channel	115 nC 115 nC	14 mOhm	AEC-Q101	7.14 W	Automotive	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.27	1m+

3D models and CAD resources for this part

General part information

P-Channel 40 V 17.3A (Tc) 7.14W (Tc) Surface Mount 8-SOIC

Technical documentation and resources