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8-SOIC
Discrete Semiconductor Products

SQ4401EY-T1_BE3

Obsolete

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8-SOIC
Discrete Semiconductor Products

SQ4401EY-T1_BE3

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSQ4401EY-T1_BE3
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs115 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds4250 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)7.14 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]14 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SQ4401 Series

P-Channel 40 V 17.3A (Tc) 7.14W (Tc) Surface Mount 8-SOIC

Documents

Technical documentation and resources

No documents available