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WNSC2D08650TJ

Discrete Semiconductor Products

WNSC2D08650TJ

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WeEn Semiconductors

DIODE SIL CARBIDE 650V 8A 5DFN

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WNSC2D08650TJ

Discrete Semiconductor Products

WNSC2D08650TJ

Active

WeEn Semiconductors

DIODE SIL CARBIDE 650V 8A 5DFN

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC2D08650TJ

Capacitance @ Vr, F	260 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	175 °C
Package / Case	4-VSFN Exposed Pad
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	5-DFN (8x8)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.44
	Digi-Reel®	1	$ 2.44
	N/A	0	$ 0.00
	Tape & Reel (TR)	3000	$ 1.10
		6000	$ 1.06
		9000	$ 1.02

Description

General part information

WNSC2 Series

Diode 650 V 8A Surface Mount 5-DFN (8x8)

Documents

Technical documentation and resources

No documents available

WNSC2 Series

Part	Speed	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Current - Average Rectified (Io) (per Diode)	Diode Configuration
WeEn Semiconductors WNSC2D03650MBJ	500 mA	130 pF	20 µA	DO-214AA SMB	1.7 V	Surface Mount	SMB	3 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C
WeEn Semiconductors WNSC2D08650TJ	500 mA	260 pF	40 µA	4-VSFN Exposed Pad		Surface Mount	5-DFN (8x8)	8 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C	1.7 V
WeEn Semiconductors WNSC2D201200W6Q	500 mA	845 pF	200 µA	TO-247-2		Through Hole	TO-247-2		SiC (Silicon Carbide) Schottky	1.2 kV	0 ns	175 °C	1.8 V
WeEn Semiconductors WNSC2D021200D6J	500 mA	95 pF	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3		Surface Mount	DPAK	2 A	SiC (Silicon Carbide) Schottky	1.2 kV	0 ns	175 °C	1.65 V
WeEn Semiconductors WNSC2M1K0170WQ				TO-247-3		Through Hole	TO-247-3		MOSFET (Metal Oxide)					N-Channel	12 nC	15 V 18 V	22 V	-10 V	1 Ohm	7 A	79 W	225 pF	4.2 V	175 °C	-55 °C	1700 V
WeEn Semiconductors WNSC2D10650WQ	500 mA	310 pF	50 µA	TO-247-2		Through Hole	TO-247-2	10 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C	1.7 V
WeEn Semiconductors WNSC2D20650CJQ	500 mA		50 µA	SC-65-3 TO-3P-3		Through Hole	TO-3PF		SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C	1.7 V														20 A	1 Pair Common Cathode
WeEn Semiconductors WNSC2D151200W6Q	500 mA	700 pF	150 µA	TO-247-2	1.7 V	Through Hole	TO-247-2	15 A	SiC (Silicon Carbide) Schottky	1.2 kV	0 ns	175 °C
WeEn Semiconductors WNSC2D101200WQ	500 mA	490 pF	110 µA	TO-247-2	1.65 V	Through Hole	TO-247-2	10 A	SiC (Silicon Carbide) Schottky	1.2 kV	0 ns	175 °C
WeEn Semiconductors WNSC2D06650XQ	500 mA	198 pF	30 µA	TO-220-2 Full Pack Isolated Tab	1.7 V	Through Hole	TO-220F	6 A	SiC (Silicon Carbide) Schottky	650 V	0 ns	175 °C	6 A