Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPAN60R800CEXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.4 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 17.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 27 W |
| Rds On (Max) @ Id, Vgs [Max] | 800 mOhm |
| Supplier Device Package | PG-TO220-FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 3.5 V |
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Vgs(th) (Max) @ Id [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | MOSFET (Metal Oxide) | 373 pF | N-Channel | 8.4 A | 17.2 nC | 20 V | 3.5 V | 600 V | Through Hole | 10 V | 27 W | 800 mOhm | PG-TO220-FP | -40 °C | 150 °C | TO-220-3 Full Pack | |||||
INFINEON | MOSFET (Metal Oxide) | 534 pF | N-Channel | 10 A | 20 V | 650 V | Through Hole | 10 V | PG-TO220-FP | -40 °C | 150 °C | TO-220-3 Full Pack | 23 W | 360 mOhm | 12.7 nC | 4.5 V | |||||
 INFINEON | MOSFET (Metal Oxide) | N-Channel | 9 A | 13 nC | 20 V | 650 V | Through Hole | 10 V | 22 W | PG-TO220 Full Pack | -40 °C | 150 °C | TO-220-3 Full Pack | 360 mOhm | 4 V | 555 pF | |||||
 INFINEON | MOSFET (Metal Oxide) | N-Channel | 18 A | 20 V | 600 V | Through Hole | 10 V | 26 W | PG-TO220-FP | -40 °C | 150 °C | TO-220-3 Full Pack | 180 mOhm | 25 nC | 4 V | 1081 pF | |||||
INFINEON | MOSFET (Metal Oxide) | 1015 pF | N-Channel | 16 A | 20 V | 650 V | Through Hole | 10 V | 25 W | PG-TO220-FP | -40 °C | 150 °C | TO-220-3 Full Pack | 210 mOhm | 23 nC | 4.5 V | |||||
INFINEON | MOSFET (Metal Oxide) | 440 pF | N-Channel | 9.9 A | 20 V | 600 V | Through Hole | 10 V | 28 W | PG-TO220-FP | -40 °C | 150 °C | TO-220-3 Full Pack | 650 mOhm | 20.5 nC | 3.5 V | |||||
INFINEON | MOSFET (Metal Oxide) | 1503 pF | N-Channel | 25 A | 20 V | 650 V | Through Hole | 10 V | 32 W | PG-TO220-FP | -40 °C | 150 °C | TO-220-3 Full Pack | 125 mOhm | 36 nC | 4.5 V | |||||
INFINEON | MOSFET (Metal Oxide) | 363 pF | N-Channel | 6 A | 20 V | 650 V | Through Hole | 10 V | 21 W | PG-TO220 Full Pack | -40 °C | 150 °C | TO-220-3 Full Pack | 600 mOhm | 9 nC | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.56 | |
Description
General part information
IPAN60 Series
N-Channel 600 V 8.4A (Tc) 27W (Tc) Through Hole PG-TO220-FP
Documents
Technical documentation and resources
No documents available