IPAN60 Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 600V 8.4A TO220

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPAN60R800CEXKSA1	MOSFET (Metal Oxide)	373 pF	N-Channel	8.4 A	17.2 nC	20 V	3.5 V	600 V	Through Hole	10 V	27 W	800 mOhm	PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack
INFINEON IPAN60R360PFD7SXKSA1	MOSFET (Metal Oxide)	534 pF	N-Channel	10 A		20 V		650 V	Through Hole	10 V			PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack	23 W	360 mOhm	12.7 nC	4.5 V
INFINEON IPAN60R360P7SXKSA1	MOSFET (Metal Oxide)		N-Channel	9 A	13 nC	20 V		650 V	Through Hole	10 V	22 W		PG-TO220 Full Pack	-40 °C	150 °C	TO-220-3 Full Pack		360 mOhm		4 V	555 pF
INFINEON IPAN60R180P7SXKSA1	MOSFET (Metal Oxide)		N-Channel	18 A		20 V		600 V	Through Hole	10 V	26 W		PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack		180 mOhm	25 nC	4 V	1081 pF
INFINEON IPAN60R210PFD7SXKSA1	MOSFET (Metal Oxide)	1015 pF	N-Channel	16 A		20 V		650 V	Through Hole	10 V	25 W		PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack		210 mOhm	23 nC	4.5 V
INFINEON IPAN60R650CEXKSA1	MOSFET (Metal Oxide)	440 pF	N-Channel	9.9 A		20 V		600 V	Through Hole	10 V	28 W		PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack		650 mOhm	20.5 nC	3.5 V
INFINEON IPAN60R125PFD7SXKSA1	MOSFET (Metal Oxide)	1503 pF	N-Channel	25 A		20 V		650 V	Through Hole	10 V	32 W		PG-TO220-FP	-40 °C	150 °C	TO-220-3 Full Pack		125 mOhm	36 nC	4.5 V
INFINEON IPAN60R600P7SXKSA1	MOSFET (Metal Oxide)	363 pF	N-Channel	6 A		20 V		650 V	Through Hole	10 V	21 W		PG-TO220 Full Pack	-40 °C	150 °C	TO-220-3 Full Pack		600 mOhm	9 nC	4 V