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TO-252
Discrete Semiconductor Products

SIHD3N50DT1-GE3

Obsolete

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DocumentsDatasheet
TO-252
Discrete Semiconductor Products

SIHD3N50DT1-GE3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIHD3N50DT1-GE3
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds175 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs [Max]3.2 Ohm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 0.34
6000$ 0.32
10000$ 0.30

Description

General part information

SIHD3 Series

N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA

Documents

Technical documentation and resources