SIHD3 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 3A DPAK
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 10 V | 5 V | 30 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3.2 Ohm | -55 °C | 150 °C | 3 A | MOSFET (Metal Oxide) | 175 pF | Surface Mount | 500 V | TO-252AA | 12 nC | |
Vishay General Semiconductor - Diodes Division | N-Channel | 10 V | 5 V | 30 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3.2 Ohm | -55 °C | 150 °C | 3 A | MOSFET (Metal Oxide) | 175 pF | Surface Mount | 500 V | TO-252AA | 12 nC | |
Vishay General Semiconductor - Diodes Division | N-Channel | 10 V | 5 V | 30 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3.2 Ohm | -55 °C | 150 °C | 3 A | MOSFET (Metal Oxide) | 175 pF | Surface Mount | 500 V | TO-252AA | 12 nC | |
Vishay General Semiconductor - Diodes Division | N-Channel | 10 V | 5 V | 30 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -55 °C | 150 °C | 3 A | MOSFET (Metal Oxide) | 175 pF | Surface Mount | 500 V | TO-252AA | 12 nC | 3.2 Ohm |