Discrete Semiconductor Products

R6018ANJTL

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MOSFET N-CH 600V 18A LPTS

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Discrete Semiconductor Products

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MOSFET N-CH 600V 18A LPTS

Technical Specifications

Parameters and characteristics for this part

Specification	R6018ANJTL

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	100 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor R6018ANJTL	270 mOhm	MOSFET (Metal Oxide)	2050 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	100 W	600 V	30 V	N-Channel	LPTS	10 V	18 A	4.5 V	150 °C	55 nC
Rohm Semiconductor R6018JNJGTL	286 mOhm	MOSFET (Metal Oxide)		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	220 W	600 V	30 V	N-Channel	LPTS	15 V	18 A	7 V		42 nC	150 °C	-55 °C	1300 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.98

General part information

N-Channel 600 V 18A (Tc) 100W (Tc) Surface Mount LPTS

Technical documentation and resources

No documents available