Discrete Semiconductor Products

R6018ANJTL

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POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 600V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, LPTS, 3/2 PIN

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Discrete Semiconductor Products

R6018ANJTL

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Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 600V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, LPTS, 3/2 PIN

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6018ANJTL

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2050 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

R6018JNJ Series

600V 18A TO-263, PrestoMOS™ with integrated high-speed diode

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor R6018ANJTL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	MOSFET (Metal Oxide)	100 W	2050 pF	N-Channel	18 A	55 nC	4.5 V	LPTS	30 V	10 V	150 °C	Surface Mount	270 mOhm
Rohm Semiconductor R6018JNJGTL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	MOSFET (Metal Oxide)	220 W		N-Channel	18 A			LPTS	30 V	15 V		Surface Mount	286 mOhm	42 nC	-55 °C	150 °C	1300 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

R6018JNJ Series

R6018JNJ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Documents

Technical documentation and resources

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