R6018JNJ Series

600V 18A TO-263, PrestoMOS™ with integrated high-speed diode

Catalog

600V 18A TO-263, PrestoMOS™ with integrated high-speed diode

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor R6018ANJTL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	MOSFET (Metal Oxide)	100 W	2050 pF	N-Channel	18 A	55 nC	4.5 V	LPTS	30 V	10 V	150 °C	Surface Mount	270 mOhm
Rohm Semiconductor R6018JNJGTL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	MOSFET (Metal Oxide)	220 W		N-Channel	18 A			LPTS	30 V	15 V		Surface Mount	286 mOhm	42 nC	-55 °C	150 °C	1300 pF

Catalog

600V 18A TO-263, PrestoMOS™ with integrated high-speed diode

Key Features

• Fast reverse recovery time (trr), Low on-resistance, Fast switching speed, Drive circuits can be simple, Pb-free plating ; RoHS compliant

Description

R6018JNJ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).