Discrete Semiconductor Products

IRFR9110TRLPBF

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MOSFET P-CH 100V 3.1A DPAK

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Discrete Semiconductor Products

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MOSFET P-CH 100V 3.1A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR9110TRLPBF

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.7 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFR9110TRRPBF	200 pF	3.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	DPAK	8.7 nC	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	P-Channel	10 V	4 V	20 V	1.2 Ohm	2.5 W 25 W
Vishay General Semiconductor - Diodes Division IRFR9110TRLPBF	200 pF	3.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	DPAK	8.7 nC	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	P-Channel	10 V	4 V	20 V	1.2 Ohm	2.5 W 25 W
Vishay General Semiconductor - Diodes Division IRFR9110TR	200 pF	3.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	DPAK	8.7 nC	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	P-Channel	10 V	4 V	20 V	1.2 Ohm	2.5 W 25 W

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General part information

P-Channel 100 V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount DPAK

Technical documentation and resources