IRFR9110 Series

Catalog

MOSFET P-CH 100V 3.1A DPAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFR9110TRRPBF	200 pF	3.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	DPAK	8.7 nC	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	P-Channel	10 V	4 V	20 V	1.2 Ohm	2.5 W 25 W
Vishay General Semiconductor - Diodes Division IRFR9110TRLPBF	200 pF	3.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	DPAK	8.7 nC	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	P-Channel	10 V	4 V	20 V	1.2 Ohm	2.5 W 25 W
Vishay General Semiconductor - Diodes Division IRFR9110TR	200 pF	3.1 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	DPAK	8.7 nC	-55 °C	150 °C	100 V	MOSFET (Metal Oxide)	P-Channel	10 V	4 V	20 V	1.2 Ohm	2.5 W 25 W