Discrete Semiconductor Products

STB130N6F7

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STMicroelectronics

N-CHANNEL 60 V, 4.2 MOHM TYP., 80 A STRIPFET F7 POWER MOSFET IN D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet

Discrete Semiconductor Products

STB130N6F7

Active

STMicroelectronics

N-CHANNEL 60 V, 4.2 MOHM TYP., 80 A STRIPFET F7 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB130N6F7

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STB130N6F7 Series

N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
STMicroelectronics STB130N6F7	Surface Mount	2600 pF	10 V	42 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	TO-263 (D2PAK)	-55 °C	175 ░C	4 V	N-Channel	MOSFET (Metal Oxide)	5 mOhm	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.74
		10	$ 1.77
		100	$ 1.22
		500	$ 0.98
	Digi-Reel®	1	$ 2.74
		10	$ 1.77
		100	$ 1.22
		500	$ 0.98
	Tape & Reel (TR)	1000	$ 0.90
		2000	$ 0.84
		3000	$ 0.81
		5000	$ 0.80
Newark	Each (Supplied on Cut Tape)	1	$ 2.49
		10	$ 2.05
		25	$ 1.87
		50	$ 1.70
		100	$ 1.52
		250	$ 1.42
		500	$ 1.32
		1000	$ 1.23

Description

General part information

STB130N6F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet