PSC1065KQ
Active650 V, 10 A SIC SCHOTTKY DIODE IN TO-220-2 R2P
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PSC1065KQ
Active650 V, 10 A SIC SCHOTTKY DIODE IN TO-220-2 R2P
Technical Specifications
Parameters and characteristics for this part
| Specification | PSC1065KQ |
|---|---|
| Capacitance @ Vr, F | 340 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 60 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1000 | $ 5.88 | |
Description
General part information
PSC1065K Series
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. The product offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Documents
Technical documentation and resources