Discrete Semiconductor Products

PXP400-100QSJ

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MOSFET P-CH 100V 1.4A MLPAK33

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Discrete Semiconductor Products

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MOSFET P-CH 100V 1.4A MLPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	PXP400-100QSJ

Current - Continuous Drain (Id) @ 25°C	1.4 A, 3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.2 nC
Input Capacitance (Ciss) (Max) @ Vds	544 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1.7 W, 10.4 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	MLPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Power Dissipation (Max)
Freescale Semiconductor - NXP PXP400-100QSJ	6 V 10 V	8-PowerVDFN	1.4 A 3.5 A	Surface Mount	400 mOhm	20 V	P-Channel	100 V	-55 °C	150 °C	4 V	544 pF	15.2 nC	MLPAK33	MOSFET (Metal Oxide)	1.7 W 10.4 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 1.4A (Ta), 3.5A (Tc) 1.7W (Ta), 10.4W (Tc) Surface Mount MLPAK33

Technical documentation and resources

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