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Nexperia-BC807K-25R GP BJT Trans GP BJT PNP 45V 0.5A 800mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Discrete Semiconductor Products

PMV15ENER

Active
Nexperia USA Inc.

TRANS MOSFET N-CH 30V 6.2A 3-PIN SOT-23 T/R

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Nexperia-BC807K-25R GP BJT Trans GP BJT PNP 45V 0.5A 800mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Discrete Semiconductor Products

PMV15ENER

Active
Nexperia USA Inc.

TRANS MOSFET N-CH 30V 6.2A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV15ENER
Current - Continuous Drain (Id) @ 25°C6.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
Input Capacitance (Ciss) (Max) @ Vds440 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)700 mW, 8.3 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.10
9000$ 0.09
DigikeyN/A 6251$ 0.68

Description

General part information

PMV15ENE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.