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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | TO-236AB | 175 °C | -55 °C | 20 V | 2.5 V | 440 pF | 20 mOhm | SC-59 SOT-23-3 TO-236-3 | N-Channel | 30 V | MOSFET (Metal Oxide) | 8.3 W 700 mW | 14 nC | 4.5 V 10 V | 6.2 A | Surface Mount |