Discrete Semiconductor Products
TPN1110ENH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 200 V, 0.114 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
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Discrete Semiconductor Products
TPN1110ENH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 200 V, 0.114 Ω@10V, TSON ADVANCE, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPN1110ENH,L1Q |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.2 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 39 W, 700 mW |
| Rds On (Max) @ Id, Vgs | 114 mOhm |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 28424 | $ 2.05 | |
Description
General part information
TPN1110ENH Series
12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.114 Ω@10V, TSON Advance, U-MOSⅧ-H
Documents
Technical documentation and resources