TPN1110ENH Series
12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.114 Ω@10V, TSON Advance, U-MOSⅧ-H
Manufacturer: Toshiba Semiconductor and Storage
Catalog
12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.114 Ω@10V, TSON Advance, U-MOSⅧ-H
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12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.114 Ω@10V, TSON Advance, U-MOSⅧ-H
12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.114 Ω@10V, TSON Advance, U-MOSⅧ-H
12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.114 Ω@10V, TSON Advance, U-MOSⅧ-H
| Part | Vgs (Max) | Operating Temperature | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 20 V | 150 °C | 39 W 700 mW | 7.2 A | N-Channel | Surface Mount | 4 V | 10 V | 8-TSON Advance (3.1x3.1) | MOSFET (Metal Oxide) | 114 mOhm | 200 V | 600 pF | 8-PowerVDFN | 7 nC |