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INFINEON 2ED2182S06FXUMA1
Integrated Circuits (ICs)

2ED2181S06FXUMA1

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INFINEON

THE 2ED2181S06F IS A 650 V, 2.5 A HIGH CURRENT HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE

INFINEON 2ED2182S06FXUMA1
Integrated Circuits (ICs)

2ED2181S06FXUMA1

Active
INFINEON

THE 2ED2181S06F IS A 650 V, 2.5 A HIGH CURRENT HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE

Technical Specifications

Parameters and characteristics for this part

Specification2ED2181S06FXUMA1
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]2.5 A
Current - Peak Output (Source, Sink) [custom]2.5 A
Driven ConfigurationHigh-Side or Low-Side
Gate TypeN-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]650 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]1.7 V
Logic Voltage - VIL, VIH [custom]1.1 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Rise / Fall Time (Typ) [custom]15 ns
Rise / Fall Time (Typ) [custom]15 ns
Supplier Device PackagePG-DSO-8-53
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.98
10$ 1.78
25$ 1.68
100$ 1.43
250$ 1.34
500$ 1.17
1000$ 0.97
Digi-Reel® 1$ 1.98
10$ 1.78
25$ 1.68
100$ 1.43
250$ 1.34
500$ 1.17
1000$ 0.97
N/A 3276$ 1.83
Tape & Reel (TR) 2500$ 0.91
5000$ 0.87
NewarkEach (Supplied on Cut Tape) 1$ 1.90
10$ 1.39
25$ 1.27
50$ 1.21
100$ 1.13
250$ 1.07
500$ 1.03
1000$ 0.99

Description

General part information

2ED2181 Series

650 Vhigh and low sidegate driver with high current, and high speed to driveMOSFETandIGBT,with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available:2ED21814S06J. Based onInfineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.