2ED2181 Series
Manufacturer: INFINEON
Beta
⌘K
THE 2ED2181S06F IS A 650 V, 2.5 A HIGH CURRENT HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE
| Part | Gate Type | Package / Case | Package / Case | Package / Case | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Input Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Number of Drivers | High Side Voltage - Max (Bootstrap) [Max] | Supplier Device Package | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Channel Type | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.154 in | 8-SOIC | 3.9 mm | High-Side or Low-Side | 15 ns | 15 ns | Non-Inverting | 20 V | 10 VDC | 2.5 A | 2.5 A | 1 | 650 V | PG-DSO-8-53 | 1.7 V | 1.1 V | Synchronous | Surface Mount | 125 °C | -40 °C |