Specification	SSM3J353F,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	159 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V, -25 V
Vgs(th) (Max) @ Id	2.2 V

SSM3J353F Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.15 Ω@10V, SOT-346(S-Mini)

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3J353F,LF	3.4 nC	150 °C	MOSFET (Metal Oxide)	30 V	SC-59 SOT-23-3 TO-236-3	159 pF	P-Channel	2 A	S-Mini	4 V	10 V	2.2 V	-25 V 20 V	Surface Mount	600 mW	150 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	8493	$ 0.39

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.15 Ω@10V, SOT-346(S-Mini)

Technical documentation and resources