High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.15 Ω@10V, SOT-346(S-Mini)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.15 Ω@10V, SOT-346(S-Mini)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -2.0 A, 0.15 Ω@10V, SOT-346(S-Mini)
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Technology | Drain to Source Voltage (Vdss) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs(th) (Max) @ Id | Vgs (Max) | Mounting Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 3.4 nC | 150 °C | MOSFET (Metal Oxide) | 30 V | SC-59 SOT-23-3 TO-236-3 | 159 pF | P-Channel | 2 A | S-Mini | 4 V | 10 V | 2.2 V | -25 V 20 V | Surface Mount | 600 mW | 150 mOhm |