Discrete Semiconductor Products

BYT79-600,127

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DIODE GEN PURP 600V 15A TO220AC

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 15A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYT79-600,127

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	60 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.38 V

Part	Operating Temperature - Junction [Max]	Technology	Package / Case	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]
WeEn Semiconductors BYT79X-600,127	150 °C	Standard	TO-220-2 Full Pack Isolated Tab	200 mA 500 ns	50 µA	60 ns	15 A	Through Hole	TO-220FP	1.38 V	600 V
WeEn Semiconductors BYT79-500,127	150 °C	Standard	TO-220-2	200 mA 500 ns	50 µA	60 ns	14 A	Through Hole	TO-220AC		500 V	1.38 V
WeEn Semiconductors BYT79B-600PJ	175 ░C	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	10 µA	60 ns	15 A	Surface Mount	D2PAK	1.38 V	600 V
WeEn Semiconductors BYT79-600,127	150 °C	Standard	TO-220-2	200 mA 500 ns	50 µA	60 ns	15 A	Through Hole	TO-220AC	1.38 V	600 V
WeEn Semiconductors BYT79X-600PQ	175 ░C	Standard	TO-220-2 Full Pack Isolated Tab	200 mA 500 ns	10 µA	60 ns	15 A	Through Hole	TO-220FP	1.38 V	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 15A Through Hole TO-220AC

Technical documentation and resources

No documents available