Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMX800ENEZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 500 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 32 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0603 Metric |
| Package / Case | 0201 |
| Power Dissipation (Max) | 4.7 W, 300 mW |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm |
| Supplier Device Package | DFN0603-3 (SOT8013) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 15000 | $ 0.08 | |
| 30000 | $ 0.08 | |||
| 75000 | $ 0.07 | |||
| 105000 | $ 0.06 | |||
| Cut Tape (CT) | 1 | $ 0.41 | ||
| 10 | $ 0.29 | |||
| 100 | $ 0.15 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.10 | |||
| 2000 | $ 0.09 | |||
| 5000 | $ 0.09 | |||
| Digi-Reel® | 1 | $ 0.41 | ||
| 10 | $ 0.29 | |||
| 100 | $ 0.15 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.10 | |||
| 2000 | $ 0.09 | |||
| 5000 | $ 0.09 | |||
| N/A | 14732 | $ 0.55 | ||
Description
General part information
PMX800ENE Series
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
Documents
Technical documentation and resources