Catalog
60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
Beta
⌘K
60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package / Case | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | FET Type | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 0603 Metric | 0201 | 60 V | 4.5 V 10 V | 2.5 V | 500 mA | 4.7 W 300 mW | Surface Mount | 20 V | 32 pF | 1.1 Ohm | 1 nC | MOSFET (Metal Oxide) | N-Channel | DFN0603-3 (SOT8013) | 150 °C | -55 °C |