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8-PowerPQFN
Discrete Semiconductor Products

IRFH5215TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; SUPERSO8 5X6 PACKAGE; 58 MOHM;

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8-PowerPQFN
Discrete Semiconductor Products

IRFH5215TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; SUPERSO8 5X6 PACKAGE; 58 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFH5215TRPBF
Current - Continuous Drain (Id) @ 25°C27 A, 5 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-VQFN Exposed Pad
Power Dissipation (Max)104 W, 3.6 W
Rds On (Max) @ Id, Vgs58 mOhm
Supplier Device PackagePQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.93

Description

General part information

IRFH5215 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.