Discrete Semiconductor Products

SI4090DY-T1-GE3

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MOSFET N-CH 100V 19.7A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 100V 19.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4090DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	19.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	69 nC
Input Capacitance (Ciss) (Max) @ Vds	2410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	7.8 W, 3.5 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4090DY-T1-GE3	2410 pF	-55 °C	150 °C	100 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	3.3 V	19.7 A	3.5 W 7.8 W	Surface Mount	8-SOIC	6 V 10 V	69 nC	20 V	N-Channel	10 mOhm

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General part information

N-Channel 100 V 19.7A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Technical documentation and resources