SI4090 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 19.7A 8SO
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2410 pF | -55 °C | 150 °C | 100 V | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 3.3 V | 19.7 A | 3.5 W 7.8 W | Surface Mount | 8-SOIC | 6 V 10 V | 69 nC | 20 V | N-Channel | 10 mOhm |