Discrete Semiconductor Products

SIHP8N50D-E3

LTB

MOSFET N-CH 500V 8.7A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 8.7A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP8N50D-E3

Current - Continuous Drain (Id) @ 25°C	8.7 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	527 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Technology	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIHP8N50D-E3	-55 °C	150 °C	5 V	N-Channel	MOSFET (Metal Oxide)	156 W	TO-220-3	527 pF	30 V	500 V	10 V	TO-220AB	30 nC	Through Hole	8.7 A	850 mOhm
Vishay General Semiconductor - Diodes Division SIHP8N50D-GE3	-55 °C	150 °C	5 V	N-Channel	MOSFET (Metal Oxide)	156 W	TO-220-3	527 pF	30 V	500 V	10 V	TO-220AB	30 nC	Through Hole	8.7 A	850 mOhm

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General part information

N-Channel 500 V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB

Technical documentation and resources