SIHP8 Series

Catalog

MOSFET N-CH 500V 8.7A TO220AB

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Technology	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIHP8N50D-E3	-55 °C	150 °C	5 V	N-Channel	MOSFET (Metal Oxide)	156 W	TO-220-3	527 pF	30 V	500 V	10 V	TO-220AB	30 nC	Through Hole	8.7 A	850 mOhm
Vishay General Semiconductor - Diodes Division SIHP8N50D-GE3	-55 °C	150 °C	5 V	N-Channel	MOSFET (Metal Oxide)	156 W	TO-220-3	527 pF	30 V	500 V	10 V	TO-220AB	30 nC	Through Hole	8.7 A	850 mOhm