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Discrete Semiconductor Products

CSD25202W15T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 26 MOHM, GATE ESD PROTECTION

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DSBGA (YZF)
Discrete Semiconductor Products

CSD25202W15T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 26 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD25202W15T
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]7.5 nC
Input Capacitance (Ciss) (Max) @ Vds1010 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDSBGA, 9-UFBGA
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs26 mOhm
Supplier Device Package9-DSBGA
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]-6 V
Vgs(th) (Max) @ Id1.05 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.23
10$ 1.00
100$ 0.78
Digi-Reel® 1$ 1.23
10$ 1.00
100$ 0.78
Tape & Reel (TR) 250$ 0.54
500$ 0.47
1250$ 0.46
Texas InstrumentsSMALL T&R 1$ 1.06
100$ 0.72
250$ 0.55
1000$ 0.37

Description

General part information

CSD25202W15 Series

This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.