Discrete Semiconductor Products

PMCM950ENEZ

Obsolete

MOSFET N-CH 60V 4.8A 9WLCSP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 4.8A 9WLCSP

Technical Specifications

Parameters and characteristics for this part

Specification	PMCM950ENEZ

Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	9-XFBGA, WLCSP
Power Dissipation (Max)	780 mW, 12.5 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	9-WLCSP (1.48x1.48)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMCM950ENEZ	1160 pF	4.8 A	60 V	20 V	41 mOhm	9-WLCSP (1.48x1.48)	45 nC	12.5 W 780 mW	1.5 V	4.5 V 10 V	MOSFET (Metal Oxide)	9-XFBGA WLCSP	N-Channel	Surface Mount	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 4.8A (Ta) 780mW (Ta), 12.5W (Tc) Surface Mount 9-WLCSP (1.48x1.48)

Technical documentation and resources