Specification	SSM5H16TU,LF

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.9 nC
Input Capacitance (Ciss) (Max) @ Vds	123 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD (5 Leads), Flat Leads
Power Dissipation (Max)	500 mW
Supplier Device Package	UFV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

SSM5H16 Series

Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM5H16TU,LF	12 V	1.9 A	N-Channel	UFV	30 V	1.8 V 4 V	1 V	123 pF	Schottky Diode (Isolated)	6-SMD (5 Leads) Flat Leads	MOSFET (Metal Oxide)	1.9 nC	Surface Mount	150 °C	500 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, 30 V/1.9 A N-ch MOS + SBD, SOT-353F(UFV)

Technical documentation and resources